PMBF4416 Datasheet - Philips Electronics
MFG CO.

Philips Electronics
DESCRIPTION
N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers.
FEATURES
• Low noise
• Interchangeability of drain and source connections
• High gain.
Page Link's:
1
2
3
4
5
6
7
8
9
Part Name
Description
View
MFG CO.
N-CHANNEL FIELD-EFFECT TRANSISTOR
New Jersey Semiconductor
N-Channel Field Effect Transistor
SHIKE Electronics
N-channel field-effect transistor
Philips Electronics
N-Channel Field Effect Transistor
Unspecified
N-Channel Field Effect Transistor
Unspecified
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR ( Rev : 2014 )
Unisonic Technologies
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
Micro Electronics
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KEC
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KEC