GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab. The device uses ’trench’ technology to achieve low on-state resistance.

FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Isolated mounting tab

APPLICATIONs:-
• d.c. to d.c. converters
• switched mode power supplies