General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT61003NY

FEATUREs and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified

APPLICATIONs
• Power management
• Loadswitch
• Linear mode voltage regulator
• Backlighting applications