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PHPT61002NYC Datasheet - Nexperia B.V. All rights reserved

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Part Name
PHPT61002NYC

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15 Pages

File Size
655.5 kB

MFG CO.
NEXPERIA
Nexperia B.V. All rights reserved 

General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

PNP complement: PHPT61002PYC


FEATUREs and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation


APPLICATIONs
• Load switch
• Power management
• Linear mode voltage regulator
• Backlighting apllications


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