Part Name
PHD20N06T
Description
Other PDF
no available.
PDF
page
12 Pages
File Size
215.8 kB
MFG CO.

NXP Semiconductors.
General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
FEATUREs and benefits
■ Low conduction losses due to low on-state resistance
■ Suitable for high frequency applications due to fast switching characteristics
APPLICATIONs
■ DC-to-DC convertors
■ General purpose switching
■ Switched-mode power supplies