General description
Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
■ Low conduction losses due to low on-state resistance
■ Suitable for high frequency applications due to fast switching characteristics

APPLICATIONs
■ Motor and actuator drivers
■ Power management
■ Synchronized rectification