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PESD5V0S1BA Datasheet - NXP Semiconductors.

PESD5V0S1BL image

Part Name
PESD5V0S1BA

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page
15 Pages

File Size
84.4 kB

MFG CO.
NXP
NXP Semiconductors. 

General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients.


FEATUREs
◾ Bidirectional ESD protection of one line 
◾ ESD protection > 30 kV
◾ Max. peak pulse power: PPP = 130 W 
◾ IEC 61000-4-2, level 4 (ESD)
◾ Low clamping voltage: V(CL)R = 14 V 
◾ IEC 61000-4-5 (surge); IPP = 12 A
◾ Ultra low leakage current: IRM = 5 nA 
◾ Ultra small SMD plastic packages


APPLICATIONs
◾ Cellular handsets and accessories 
◾ Communication systems
◾ Portable electronics 
◾ Audio and video equipment
◾ Computers and peripherals


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