PESD12VS2UT Datasheet - NXP Semiconductors.
MFG CO.

NXP Semiconductors.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
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