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PESD12VS1UJ Datasheet - NXP Semiconductors.

PESD5V0S1UJ image

Part Name
PESD12VS1UJ

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page
14 Pages

File Size
93.6 kB

MFG CO.
NXP
NXP Semiconductors. 

General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage.


FEATUREs
■ Transient Voltage Suppression (TVS)
   protection of one line
■ ESD protection up to 30 kV
■ Max. peak pulse power: PPP = 890 W 
■ IEC 61000-4-2; level 4 (ESD)
■ Low clamping voltage: VCL = 19 V 
■ IEC 61000-4-5 (surge); IPP = 47 A
■ Low leakage current: IRM = 300 nA 
■ AEC-Q101 qualified


APPLICATIONs
■ Computers and peripherals 
■ Communication systems
■ Audio and video equipment 
■ Portable electronics
■ Cellular handsets and accessories 
■ Medical and industrial equipment


Part Name
Description
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