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PDTC123E Datasheet - Nexperia B.V. All rights reserved

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Part Name
PDTC123E

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page
15 Pages

File Size
411.3 kB

MFG CO.
NEXPERIA
Nexperia B.V. All rights reserved 

DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).


FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.


APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.


Part Name
Description
View
MFG CO.
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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NXP Semiconductors.
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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NXP Semiconductors.
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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NXP Semiconductors.
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
Philips Electronics
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
Nexperia B.V. All rights reserved
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
Philips Electronics
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
Philips Electronics
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
NXP Semiconductors.
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
Nexperia B.V. All rights reserved
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF
Nexperia B.V. All rights reserved

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