PDTA115E Datasheet - Philips Electronics
MFG CO.

Philips Electronics
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
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Description
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MFG CO.
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
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PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
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Nexperia B.V. All rights reserved
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
NXP Semiconductors.
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
Philips Electronics
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
NXP Semiconductors.
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Philips Electronics
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
Nexperia B.V. All rights reserved
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
NXP Semiconductors.
NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
Nexperia B.V. All rights reserved