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PBSS8110X Datasheet - Philips Electronics

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Part Name
PBSS8110X

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page
15 Pages

File Size
120.8 kB

MFG CO.
Philips
Philips Electronics 

General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.
PNP complement: PBSS9110X.


FEATUREs
■ SOT89 package
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High efficiency leading to less heat generation


APPLICATIONs
■ Major application segments:
   ◆ Automotive 42 V power
   ◆ Telecom infrastructure
   ◆ Industrial
■ Peripheral driver:
   ◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
   ◆ Inductive load driver (e.g. relays, buzzers and motors)
■ DC-to-DC converter


Part Name
Description
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NXP Semiconductors.
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Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Philips Electronics

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