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PBSS8110X,135 Datasheet - NXP Semiconductors.

PBSS8110X image

Part Name
PBSS8110X,135

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15 Pages

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174.9 kB

MFG CO.
NXP
NXP Semiconductors. 

General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.
PNP complement: PBSS9110X.


FEATUREs
■ SOT89 package
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High efficiency leading to less heat generation


APPLICATIONs
■ Major application segments:
   ♦ Automotive 42 V power
   ♦ Telecom infrastructure
   ♦ Industrial
■ Peripheral driver:
   ♦ Driver in low supply voltage applications (e.g. lamps and LEDs)
   ♦ Inductive load driver (e.g. relays, buzzers and motors)
■ DC-to-DC converter


Part Name
Description
View
MFG CO.
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Philips Electronics
100 V, 1 A NPN low VCEsat (BISS) transistor
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NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Philips Electronics
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
Philips Electronics

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