General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160T.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High efficiency due to less heat generation
■ Reduces Printed-Circuit Board (PCB) area required
■ Cost-effective replacement for medium power transistors BCP52 and BCX52

APPLICATIONs
■ Major application segments:
   ◆ Automotive
   ◆ Telecom infrastructure
   ◆ Industrial
■ Power management:
   ◆ DC-to-DC conversion
   ◆ Supply line switching
■ Peripheral driver:
   ◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
   ◆ Inductive load drivers (e.g. relays, buzzers and motors)