DESCRIPTION
NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V.

FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
• Improved thermal behaviour due to flat leads
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capabilities
• Reduced required PCB area.

APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video cameras and hand-held devices).