Part Name
PBHV9540Z
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MFG CO.
Nexperia B.V. All rights reserved
PBHV9540Z Datasheet - Nexperia B.V. All rights reserved
Nexperia B.V. All rights reserved
General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8140Z.
FEATUREs
◾ High voltage
◾ Low collector-emitter saturation voltage VCEsat
◾ High collector current capability IC and ICM
◾ High collector current gain (hFE) at high IC
◾ AEC-Q101 qualified
◾ Medium power SMD plastic package
APPLICATIONs
◾ LED driver for LED chain module
◾ LCD backlighting
◾ Automotive motor management
◾ Switch Mode Power Supply (SMPS)
Part Name
Description
View
MFG CO.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
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