Part Name
PBHV2160Z
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PDF
page
13 Pages
File Size
196.3 kB
MFG CO.
NXP Semiconductors.
PBHV2160Z Datasheet - NXP Semiconductors.
NXP Semiconductors.
General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability
• High collector current gain hFE at high IC
APPLICATIONs
• Electronic ballast for fluorecent lighting
• LED driver for LED chain module
• LCD backlighting
• HID front lighting
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
Part Name
Description
View
MFG CO.
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
NXP Semiconductors.
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