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PA1970 Datasheet - NEC => Renesas Technology

UPA1970 image

Part Name
PA1970

Other PDF
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page
8 Pages

File Size
64.9 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source.
The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 2.5 V drive available
• Low on-state resistance
    RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A)
    RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A)
    RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)


Part Name
Description
View
MFG CO.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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