PA1970 Datasheet - NEC => Renesas Technology
MFG CO.

NEC => Renesas Technology
DESCRIPTION
The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source.
The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A)
RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A)
RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)
Part Name
Description
View
MFG CO.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology