P80NF12(2014) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
FEATUREs
• Exceptional dv/dt capability
• 100% avalanche tested
• Application oriented characterization
APPLICATION
• Switching applications
Part Name
Description
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MFG CO.
N-channel 80 V, 0.003 Ω typ., 120 A, STripFET™ F7 Power MOSFET in TO-220 package
STMicroelectronics
N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 500 V, 0.40 Ω typ., 8.5 A MDmesh™ II Power MOSFET in a TO-220 package ( Rev : 2015 )
STMicroelectronics
N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package
STMicroelectronics
N-channel 40 V clamped 3.6 mΩ typ., 120 A fully protected SAFeFET™ Power MOSFET in a TO-220 package ( Rev : 2013 )
STMicroelectronics
N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package
STMicroelectronics