P7NK80Z(2002) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
■ TYPICAL RDS(on) = 1.5 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SMPS FOR INDUSTRIAL APPLICATION.
■ LIGHTING (PREHEATING)
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Part Name
Description
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N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2003 )
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N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET ( Rev : 2003 )
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N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2002 )
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N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET
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N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™ Power MOSFET
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