Part Name
P105N3LL
Other PDF
no available.
PDF
page
13 Pages
File Size
802.1 kB
MFG CO.
STMicroelectronics
P105N3LL(2015) Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
Part Name
Description
View
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