datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Renesas Electronics  >>> NX6514EH PDF

NX6514EH Datasheet - Renesas Electronics

NX6514EH image

Part Name
NX6514EH

Other PDF
  no available.

PDF
DOWNLOAD     

page
7 Pages

File Size
194 kB

MFG CO.
Renesas
Renesas Electronics 

DESCRIPTION
The NX6514EH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 5.0 mW
• Low threshold current Ith = 10 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.7 mm


APPLICATIONS
• 1.25 Gb/s FTTH P2P
• OC-48 IR-2


Part Name
Description
View
MFG CO.
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
PDF
Renesas Electronics
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]