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NX6342EP Datasheet - Renesas Electronics

NX6342EP image

Part Name
NX6342EP

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page
7 Pages

File Size
190.4 kB

MFG CO.
Renesas
Renesas Electronics 

DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.23 W/A
• Wide operating temperature range TC = −5 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.0 mm


APPLICATIONS
• 10 Gb/s BASE-LR/LW (IEEE802.3ae)


Part Name
Description
View
MFG CO.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
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Renesas Electronics
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
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Renesas Electronics
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
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California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics

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