NX6342EP Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.23 W/A
• Wide operating temperature range TC = −5 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.0 mm
APPLICATIONS
• 10 Gb/s BASE-LR/LW (IEEE802.3ae)
Part Name
Description
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