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NX6308GH Datasheet - Renesas Electronics

NX6308GH image

Part Name
NX6308GH

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9 Pages

File Size
191.8 kB

MFG CO.
Renesas
Renesas Electronics 

DESCRIPTION
The NX6308GH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. 


FEATURES
• Optical output power Po = 10.0 mW
• Low threshold current lth = 10 mA
• Differential efficiency ηd = 0.4 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 7.5 mm


APPLICATION
• 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)


Part Name
Description
View
MFG CO.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
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California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
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California Eastern Laboratories.
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
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California Eastern Laboratories.
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
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California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
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California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
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California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
NEC => Renesas Technology
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
Renesas Electronics

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