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NX5320EH-AZ Datasheet - California Eastern Laboratories.

NX5320EH image

Part Name
NX5320EH-AZ

Other PDF
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page
11 Pages

File Size
230.1 kB

MFG CO.
CEL
California Eastern Laboratories. 

DESCRIPTION
The NX5320EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power Po = 7.0 mW
• Low threshold current lth = 8 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −30 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 5.8 mm


APPLICATION
• 4 G fiber channel


Part Name
Description
View
MFG CO.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
PDF
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
NEC => Renesas Technology
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION ( Rev : 2006 )
PDF
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
NEC => Renesas Technology
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.

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