NX5313 Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
FEATURES
• Optical output power Po = 13.0 mW
• Low threshold current lth = 6 mA
• Differential Efficiency ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.35 mm
• LD beam angle optimized for 8 degree angled SMF
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
Part Name
Description
View
MFG CO.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
NEC => Renesas Technology
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Laboratories.
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Renesas Electronics
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.