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NX5311 PDF
NX5311 Datasheet - California Eastern Laboratories.
MFG CO.

California Eastern Laboratories.
DESCRIPTION
NECs NX5311 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
FEATURES
• OPTICAL OUTPUT POWER: Po = 10.0 mW
• LOW THRESHOLD CURRENT : Ith = 6 mA
• DIFFERENTIAL EFFICIENCY: ηd =0.50 W/A
• WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE: ø5.6 mm
• FOCAL POINT: 7.5 mm
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
Part Name
Description
View
MFG CO.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS ( Rev : V2 )
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
NEC => Renesas Technology
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Laboratories.