Part Name
NX5310
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MFG CO.
California Eastern Laboratories.
NX5310 Datasheet - California Eastern Laboratories.
California Eastern Laboratories.
DESCRIPTION
NECʼs NX5310 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
FEATURES
• OPTICAL OUTPUT POWER: Po = 5.0 mW
• LOW THRESHOLD CURRENT : Ith = 6 mA
• DIFFERENTIAL EFFICIENCY: ηd =0.3 W/A
• WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE: ø5.6 mm
• FIBER COUPLING POINT: 5.8 mm
APPLICATIONS
• STM-1 (I-1, S-1.1), STM-4 (I-4, S-4.1), ITU-T recommendations
• FTTH P2P (Fiber To The Home Point to Point) system
Part Name
Description
View
MFG CO.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS ( Rev : V2 )
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
NEC => Renesas Technology
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
NEC => Renesas Technology
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
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