NX3008NBKMB Datasheet - Nexperia B.V. All rights reserved
MFG CO.

Nexperia B.V. All rights reserved
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ESD protection up to 2 kV
• Ultra thin package profile with 0.37 mm height
Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits