Description:
The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications.

FEATUREs:
• High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz
• TO39 Metal Sealed Package for High Reliability
• Emitter Electrode is Connected Electrically to the Case

APPLICATION:
  1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.