NTE365 Datasheet - NTE Electronics
MFG CO.

NTE Electronics
Description:
The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
FEATUREs:
● Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 15 Watts
Minimum Gain = 7.8dB
Efficiency = 55%
● Characterized with Series Equivalent Large–Signal Impedance Parameters
● Built–In Matching Network for Broadband Operation
● Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line and Overdrive
Part Name
Description
View
MFG CO.
Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
NTE Electronics