NTE360 Datasheet - NTE Electronics
MFG CO.
NTE Electronics
Description:
The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range.
FEATUREs:
• Specified 28 Volt, 175MHz Characteristics:
Output Power = 40 Watts
Minimum Gain = 7.6dB
Efficiency = 60%
• Characterized from 125 to 175MHz
• Includes Series Equivalent Impedances
Part Name
Description
View
MFG CO.
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)
NTE Electronics
40W, 175MHz RF POWER TRANSISTOR NPN SILICON
Motorola => Freescale
Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz)
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
NTE Electronics
