Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.

FEATUREs:
• 70W Minimum with Greater than 13.5dB Gain
• Withstands Severe Mismatch under Operating Conditions
• Emitter Ballasted
• Low Inductance Stripline Package