NTE2931 Datasheet - NTE Electronics
MFG CO.
NTE Electronics
Features:
● Avalanche Rugged Technology
● Rugged Gate Oxide Technology
● Lower Input Capacitance
● Improved Gate Charge
● Extended Safe Operating Area
● Lower RDS(on): 0.144Ω Typ
● Lower Leakage Current: 10µA (Max) @ VDS = 200V
Part Name
Description
View
MFG CO.
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
MOSFET N-Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N−Channel, Enhancement Mode High Speed Switch
NTE Electronics
