NTE2930 Datasheet - NTE Electronics
MFG CO.
NTE Electronics
Features:
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Lower RDS(on): 0.032Ω Typ
• Lower Leakage Current: 10µA (Max) @ VDS = 100V
Part Name
Description
View
MFG CO.
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
MOSFET N-Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N−Channel, Enhancement Mode High Speed Switch
NTE Electronics
