Description:
The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators.

FEATUREs:
• High Collector–Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA
• Low Collector–Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA
• High Power Dissipation: PD = 10W @ TC = +25°C