NTE1106 Datasheet - NTE Electronics
MFG CO.

NTE Electronics
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz.
FEATUREs:
• Low lead inductance stripline package for easier design and increased broadband capability.
• Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power.
• Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Part Name
Description
View
MFG CO.
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz)
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz
NTE Electronics