GENERAL DESCRIPTION
   The NTD5802NS s the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

FEATURES
• RDS(ON)≦ 4.4mΩ@VGS=10V
• RDS(ON)≦ 5.7mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current
   capability

APPLICATIONS
• Power Management in Note book
• NB/MB Vcore Low side switching
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch