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NSR0340HT1G Datasheet - ON Semiconductor

NSR0340HT1G image

Part Name
NSR0340HT1G

Other PDF
  2008  

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page
4 Pages

File Size
39.3 kB

MFG CO.
ONSEMI
ON Semiconductor 

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.


FEATUREs
• Very Low Forward Voltage Drop −415 mV @ 100 mA
• Low Reverse Current − 0.4 μA @ 25 V VR
• 250 mA of Continuous Forward Current
• Power Dissipation of 160 mW with Minimum Trace
• Very High Switching Speed
• Low Capacitance − CT = 6 pF
• NSV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection

Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs and PDAs
• GPS


Part Name
Description
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MFG CO.
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