Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATUREs
• Channel temperature 175 degree rating
• Super low on-state resistance
   ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
   ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)
   ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)
• Low input capacitance
• Gate to Source ESD protection diode built-in