Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATUREs
• Low on-state resistance
   ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF)
   ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF)
   ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
• Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
• Logic level drive type
• Designed for automotive application and AEC-Q101 qualified