NP40N055EHE-E2-AY Datasheet - Renesas Electronics
Part Name
NP40N055EHE-E2-AY
MFG CO.

Renesas Electronics
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A)
• Low input capacitance
Ciss = 1070 pF TYP.
• Built-in gate protection diode
Part Name
Description
View
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology