IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

FEATUREs
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices

Typical Applications
• Inductive Heating
• Soft Switching