IGBT with Monolithic Free Wheeling Diode

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.

FEATUREs
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Losses in IH Cooker Application
• Designed for High System Level Robustness
• These are Pb−Free Devices

Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching