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NESG340033 Datasheet - Renesas Electronics

NESG340033 image

Part Name
NESG340033

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12 Pages

File Size
212.7 kB

MFG CO.
Renesas
Renesas Electronics 

DESCRIPTION
The NESG340033 is an ideal choice for low noise, low distortion amplification.


FEATURES
• NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz
• Po (1 dB) = 21 dBm TYP. @ VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35.5 dBm TYP. @ VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz
• Maximum stable power gain: MSG =13.0 dB TYP. @ VCE = 3.3 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS3) : fT = 10 GHz
• This product is improvement of ESD
• 3-pin minimold (33 PKG)


APPLICATIONS
• Suitable for up to 1GHz applications.
   e.g. LNA (Low Noise Amplifier) or Power splitter for Digital-TV.


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