NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)

FEATURES
• The NESG3032M14 is an ideal choice for low noise, high-gain amplification
   NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 PKG)