Part Name
NESG204619-T1-A
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MFG CO.
NEC => Renesas Technology
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NESG204619-T1-A Datasheet - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS:
VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V
• 3-PIN SUPER MINIMOLD (19) PACKAGE
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MFG CO.
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Laboratories.
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
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