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NE85630-T1 Datasheet - Renesas Electronics

2SC4226 image

Part Name
NE85630-T1

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8 Pages

File Size
959.3 kB

MFG CO.
Renesas
Renesas Electronics 

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

DESCRIPTION
The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.


FEATURES
• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package


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