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NE688M23 Datasheet - NEC => Renesas Technology

NE688M23 image

Part Name
NE688M23

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2 Pages

File Size
18.6 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/ceramic substrate style "M23" package is ideal for todays portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles.


FEATURES
• NEW MINIATURE M23 PACKAGE:
   – Worlds smallest transistor package footprint —
      leads are completely underneath package body
   – Low profile/0.55 mm package height
   – Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
   fT = 9.5 GHz
• LOW NOISE FIGURE:
   NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
   IC MAX = 100 mA


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