Part Name
NE68030
Description
Other PDF
no available.
PDF
page
6 Pages
File Size
381 kB
MFG CO.
California Eastern Laboratories.
NE68030 Datasheet - California Eastern Laboratories.
California Eastern Laboratories.
DESCRIPTION
The NE68030 / 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.
FEATURES
• Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• High gain : |S21e|2 = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• 3-pin super minimold package
Part Name
Description
View
MFG CO.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
NEC => Renesas Technology
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
California Eastern Laboratories.
Share Link: 